Part Number Hot Search : 
KT3189 2N2527 STPR320F LV033MU F103NF08 C8799 NME1205S BSS71CSM
Product Description
Full Text Search
 

To Download BF493S-D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  high voltage transistor pnp silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 350 vdc collectorbase voltage v cbo 350 vdc emitterbase voltage v ebo 6.0 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 watts mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r  ja 200 c/w thermal resistance, junction to case r  jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) v (br)ceo 350 e vdc collectorbase breakdown voltage (i c = 100  adc, i e = 0) v (br)cbo 350 e vdc emitterbase breakdown voltage (i e = 100  adc, i c = 0) v (br)ebo 6.0 e vdc collector cutoff current (v ce = 250 vdc) i ces e 10 nadc emitter cutoff current (v eb = 6.0 vdc, i c = 0) i ebo e 0.1  adc collector cutoff current (v cb = 250 vdc, i e = 0, t a = 25 c) (v cb = 250 vdc, i e = 0, t a = 100 c) i cbo e e 0.005 1.0  adc 1. pulse test: pulse width  300  s; duty cycle  2.0%. on semiconductor  ? semiconductor components industries, llc, 2001 november, 2001 rev. 2 1 publication order number: bf493s/d bf493s case 2904, style 1 to92 (to226aa) 1 2 3 collector 3 2 base 1 emitter
bf493s http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) h fe 25 40 e e e collectoremitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) e 2.0 vdc baseemitter on voltage (i c = 20 ma, i b = 2.0 ma) v be(sat) e 2.0 vdc dynamic characteristics currentgain e bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 50 e mhz commonemitter feedback capacitance (v cb = 100 vdc, i e = 0, f = 1.0 mhz) c re e 1.6 pf
bf493s http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 150 -1.0 15 h fe , dc current gain t j = +125 c +25 c -55 c v ce = -10 vdc 20 30 50 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -80 -100 c, capacitance (pf) figure 2. capacitances v r , reverse voltage (volts) -0.1 100 50 20 1.0 c cb 10 2.0 5.0 c ib figure 3. currentgain e bandwidth product i c , collector current (ma) -50 -20 -10 -5.0 -2.0 100 60 40 30 20 0 t j = 25 c v ce = -20 vdc f, current-gain bandwidth product (mhz) t -1.0 i c , collector current (ma) figure 4. aono voltages v, voltage (volts) -1.0 0 v ce(sat) @ i c /i b = 10 ma v be @ v ce = -10 v -0.8 -0.6 -0.4 -0.2 v ce , collector-emitter voltage (volts) i c , collector current (ma) mpsa93 figure 5. active region e safe operating area bonding wire limitation second breakdown limitation mpsa92 100 m s 1.0 ms t j = 150 c 1.5 watt thermal limitation @ t c = 25 c 625 mw thermal limitation @ t a = 25 c -500 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 80 -100 -50 -20 -10 -5.0 -2.0 -1.0 -100 -3.0 -5.0 -10 -20 -30 -50 -100 -200 -300 1.0 s
bf493s http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector case 02904 (to226aa) issue ad on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bf493s/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada


▲Up To Search▲   

 
Price & Availability of BF493S-D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X